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Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states
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Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Croon, Jeroen
;
Kaczer, Ben
;
Lujan, Guilherme
;
Kubicek, Stefan
;
Groeseneken, Guido
;
Meuris, Marc
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1943
since deposited on 2021-10-16
Acq. date: 2026-07-15
Citations
Statistics
Views
1943
since deposited on 2021-10-16
Acq. date: 2026-07-15
Citations