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RTA and FLA of Ultra-shallow implanted layers in Ge

Date

2008
Proceedings Paper
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dc.contributor.authorWündisch, C.
dc.contributor.authorPosselt, M.
dc.contributor.authorAnwand, W.
dc.contributor.authorSchmidt, B.
dc.contributor.authorMücklich, A.
dc.contributor.authorSkorupa, W.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T12:52:52Z
dc.date.available2021-10-17T12:52:52Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14800
dc.source.beginpage245
dc.source.conference16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate30/09/2008
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage249
dc.title

RTA and FLA of Ultra-shallow implanted layers in Ge

dc.typeProceedings paper
dspace.entity.typePublication
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