Publication:

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

Date

2015
Journal article
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dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorSantos, Nuno D. M.
dc.contributor.authorVantomme, Andre
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.authorLieten, Ruben R.
dc.contributor.imecauthorVantomme, Andre
dc.date.accessioned2021-10-22T20:46:09Z
dc.date.available2021-10-22T20:46:09Z
dc.date.issued2015
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25590
dc.identifier.urlhttp://iopscience.iop.org/article/10.7567/JJAP.54.04DA07/pdf
dc.source.beginpage04DA07
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume54
dc.title

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

dc.typeJournal article
dspace.entity.typePublication
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