A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

dc.contributor.author	Vandenberghe, William
dc.contributor.author	Verhulst, Anne
dc.contributor.author	Kao, Frank
dc.contributor.author	De Meyer, Kristin
dc.contributor.author	Soree, Bart
dc.contributor.author	Magnus, Wim
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Verhulst, Anne
dc.contributor.imecauthor	Kao, Frank
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.imecauthor	Soree, Bart
dc.contributor.imecauthor	Magnus, Wim
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Verhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimec	Soree, Bart::0000-0002-4157-1956
dc.contributor.orcidimec	Groeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned	2021-10-20T17:58:51Z
dc.date.available	2021-10-20T17:58:51Z
dc.date.issued	2012
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21734
dc.source.beginpage	193509
dc.source.issue	19
dc.source.journal	Applied Physics Letters
dc.source.volume	100
dc.title	A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
dc.type	Journal article
dspace.entity.type	Publication
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