Publication:
Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
| dc.contributor.author | Lee, Kookjin | |
| dc.contributor.author | Choi, Junhee | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Grill, Alexander | |
| dc.contributor.author | Lee, Jae Woo | |
| dc.contributor.author | Van Beek, Simon | |
| dc.contributor.author | Bury, Erik | |
| dc.contributor.author | Diaz Fortuny, Javier | |
| dc.contributor.author | Vaisman Chasin, Adrian | |
| dc.contributor.author | Lee, Jaewoo | |
| dc.contributor.author | Chun, Jungu | |
| dc.contributor.author | Shin, Dong Hoon | |
| dc.contributor.author | Na, Junhong | |
| dc.contributor.author | Cho, Hyeran | |
| dc.contributor.author | Lee, Sang Wook | |
| dc.contributor.author | Kim, Gyu-Tae | |
| dc.contributor.imecauthor | Lee, Kookjin | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.imecauthor | Grill, Alexander | |
| dc.contributor.imecauthor | Van Beek, Simon | |
| dc.contributor.imecauthor | Bury, Erik | |
| dc.contributor.imecauthor | Diaz Fortuny, Javier | |
| dc.contributor.imecauthor | Vaisman Chasin, Adrian | |
| dc.contributor.orcidimec | Lee, Kookjin::0000-0002-9896-1090 | |
| dc.contributor.orcidimec | Diaz-Fortuny, Javier::0000-0002-8186-071X | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.contributor.orcidimec | Grill, Alexander::0000-0003-1615-1033 | |
| dc.contributor.orcidimec | Van Beek, Simon::0000-0002-2499-4172 | |
| dc.contributor.orcidimec | Bury, Erik::0000-0002-5847-3949 | |
| dc.contributor.orcidimec | Diaz Fortuny, Javier::0000-0002-8186-071X | |
| dc.contributor.orcidimec | Vaisman Chasin, Adrian::0000-0002-9940-0260 | |
| dc.date.accessioned | 2022-02-23T16:04:20Z | |
| dc.date.available | 2022-02-23T16:04:20Z | |
| dc.date.issued | 2021 | |
| dc.identifier.doi | 10.1002/adfm.202100625 | |
| dc.identifier.issn | 1616-301X | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39070 | |
| dc.publisher | WILEY-V C H VERLAG GMBH | |
| dc.source.beginpage | 2100625 | |
| dc.source.issue | 23 | |
| dc.source.journal | ADVANCED FUNCTIONAL MATERIALS | |
| dc.source.numberofpages | 8 | |
| dc.source.volume | 31 | |
| dc.subject.keywords | FIELD-EFFECT TRANSISTORS | |
| dc.subject.keywords | LOW-FREQUENCY NOISE | |
| dc.subject.keywords | MONOLAYER | |
| dc.subject.keywords | DEPOSITION | |
| dc.subject.keywords | ELECTRON | |
| dc.subject.keywords | GROWTH | |
| dc.subject.keywords | DEVICE | |
| dc.subject.keywords | LAYERS | |
| dc.subject.keywords | MOS2 | |
| dc.subject.keywords | HFO2 | |
| dc.title | Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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