Publication:

Heavy ion and laser-induced transients in SiGe channel pMOSFETs

Date

2013
Proceedings Paper
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dc.contributor.authorZhang, E.X.
dc.contributor.authorSamsel, I.K.
dc.contributor.authorBennett, W.G.
dc.contributor.authorHooten, N.C.
dc.contributor.authorMcCurdy, M.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorReed, R.A.
dc.contributor.authorAlles, M.L.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorWeller, R.A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-21T15:00:51Z
dc.date.available2021-10-21T15:00:51Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23437
dc.source.beginpageFA7-03
dc.source.conferenceInternational Semiconductors Device Research Symposium
dc.source.conferencedate11/12/2013
dc.source.conferencelocationBethesda, MD USA
dc.title

Heavy ion and laser-induced transients in SiGe channel pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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