Publication:

Defect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

Date

2007
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-16T20:39:50Z
dc.date.available2021-10-16T20:39:50Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13055
dc.identifier.urlhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=8749&DID=195279&action=detail
dc.source.beginpage385
dc.source.conferenceAmorphous and Polycrystalline Thin-Film Silicon Science and Technology
dc.source.conferencedate9/04/2007
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage390
dc.title

Defect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions