Publication:
Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
Date
| dc.contributor.author | Shimura, Yosuke | |
| dc.contributor.author | Takeuchi, Shotaro | |
| dc.contributor.author | Sakai, Akira | |
| dc.contributor.author | Nakatsuka, Osamu | |
| dc.contributor.author | Ogawa, Masaki | |
| dc.contributor.author | Zaima, Shigeaki | |
| dc.date.accessioned | 2021-10-16T19:42:30Z | |
| dc.date.available | 2021-10-16T19:42:30Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12895 | |
| dc.identifier.url | http://www.murota.riec.tohoku.ac.jp/SiGeC2007/ | |
| dc.source.beginpage | 29 | |
| dc.source.conference | 3rd International Workshop on New Group IV Semiconductor Nanoelectronics | |
| dc.source.conferencedate | 8/11/2007 | |
| dc.source.conferencelocation | Sendai Japan | |
| dc.source.endpage | 30 | |
| dc.title | Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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