Publication:

Significant enhancement of breakdown voltage for GaN DHFETs by silicon substrate removal

Date

2010
Presentation
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dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorCheng, Kai
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-18T21:54:08Z
dc.date.available2021-10-18T21:54:08Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18029
dc.source.conferenceInternational Workshop on Nitrides - IWN
dc.source.conferencedate19/09/2010
dc.source.conferencelocationTampa, FL USA
dc.title

Significant enhancement of breakdown voltage for GaN DHFETs by silicon substrate removal

dc.typeOral presentation
dspace.entity.typePublication
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