Publication:

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Date

2017
Journal article
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dc.contributor.authorYamamoto, Yuji
dc.contributor.authorNien, Li-Wei
dc.contributor.authorCapellini, Giovanni
dc.contributor.authorVirgilio, Michele
dc.contributor.authorCostina, Ioan
dc.contributor.authorSchubert, Markus Andreas
dc.contributor.authorSeifert, Wilfried
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorLoo, Roger
dc.contributor.authorScappucci, Giordano
dc.contributor.authorSabbagh, Diego
dc.contributor.authorHesse, Anne
dc.contributor.authorMurota, Junichi
dc.contributor.authorSchroeder, Thomas
dc.contributor.authorTillack, Bernd
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-24T19:33:21Z
dc.date.available2021-10-24T19:33:21Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29984
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa8499
dc.source.beginpage104005
dc.source.issue10
dc.source.journalSemiconductor Science and Technology
dc.source.volume32
dc.title

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

dc.typeJournal article
dspace.entity.typePublication
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