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TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

Date

2019
Journal article
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dc.contributor.authorMa, Jigang
dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorMarsland, John
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-27T13:04:19Z
dc.date.available2021-10-27T13:04:19Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33487
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8556052
dc.source.beginpage777
dc.source.endpage784
dc.source.issue1
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume66
dc.title

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

dc.typeJournal article
dspace.entity.typePublication
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