Publication:

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

Date

2009
Journal article
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dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T21:18:00Z
dc.date.available2021-10-17T21:18:00Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14904
dc.source.beginpage463
dc.source.endpage467
dc.source.issue1
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.volume27
dc.title

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

dc.typeJournal article
dspace.entity.typePublication
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