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Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories

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dc.contributor.authorMontanari, Donato
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWellekens, Dirk
dc.contributor.authorHendrickx, Paul
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-09-30T09:19:08Z
dc.date.available2021-09-30T09:19:08Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2035
dc.source.conference15th IEEE Non-Volatile Semiconductor Workshop (NVSM) ; February 1997; Monterey, Calif., USA.
dc.source.conferencelocation
dc.title

Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories

dc.typeOral presentation
dspace.entity.typePublication
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