Publication:

HfSiO bulk trap density controls the initial Vth in nMOSFETs

Date

2012-06
Journal article
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dc.contributor.authorSahhaf, Sahar
dc.contributor.authorDegraeve, Robin
dc.contributor.authorSrividya, Vydia
dc.contributor.authorDe Brabanter, K.
dc.contributor.authorSchram, Tom
dc.contributor.authorGilbert, Matthieu
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorSahhaf, Sahar
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.date.accessioned2021-10-20T15:37:07Z
dc.date.available2021-10-20T15:37:07Z
dc.date.embargo9999-12-31
dc.date.issued2012-06
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21442
dc.source.beginpage323
dc.source.endpage334
dc.source.issue2
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume12
dc.title

HfSiO bulk trap density controls the initial Vth in nMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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