Publication:

Investigation of the subthreshold swing in vertical tunnel-FETs using H2 and D2 anneals

Date

2014
Journal article
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dc.contributor.authorVandooren, Anne
dc.contributor.authorWalke, Amey
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T07:33:20Z
dc.date.available2021-10-22T07:33:20Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24736
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6697848
dc.source.beginpage359
dc.source.endpage364
dc.source.issue2
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume61
dc.title

Investigation of the subthreshold swing in vertical tunnel-FETs using H2 and D2 anneals

dc.typeJournal article
dspace.entity.typePublication
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