Publication:
Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown
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1837 since deposited on 2021-10-20
Acq. date: 2026-02-27
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Statistics
Views
1837 since deposited on 2021-10-20
Acq. date: 2026-02-27
Citations