Publication:
Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown
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1836 since deposited on 2021-10-20
1last month
Acq. date: 2025-12-16
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Views
1836 since deposited on 2021-10-20
1last month
Acq. date: 2025-12-16
Citations