AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

Publication:

2009

Journal article

Author(s)

;

;

;

;

;

;

;

Japanese Journal of Applied Physics

1971 since deposited on 2021-10-18

3last month

1last week

Acq. date: 2026-04-27