Hot-carrier stress effects on the amplitude of random telegraph signals in small area Si p-MOSFETs

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-30T09:32:08Z
dc.date.available	2021-09-30T09:32:08Z
dc.date.embargo	9999-12-31
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2139
dc.source.beginpage	1015
dc.source.endpage	1019
dc.source.issue	7
dc.source.journal	Microelectronics and Reliability
dc.source.volume	37
dc.title	Hot-carrier stress effects on the amplitude of random telegraph signals in small area Si p-MOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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