Publication:

Silicon substrate removal of GaN DHFETs for enhanced (>1100V) breakdown voltage

Date

2010
Journal article
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dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-18T21:53:06Z
dc.date.available2021-10-18T21:53:06Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18027
dc.source.beginpage851
dc.source.endpage853
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

Silicon substrate removal of GaN DHFETs for enhanced (>1100V) breakdown voltage

dc.typeJournal article
dspace.entity.typePublication
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