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Effects of voltage cycling on polarization and reliability of 3D SBT ferroelectric capacitors integrated in 0.18um CMOS technology

Date

2005
Proceedings Paper
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dc.contributor.authorWouters, Dirk
dc.contributor.authorGoux, Ludovic
dc.contributor.authorLisoni, Judit
dc.contributor.authorMaes, David
dc.contributor.authorVander Meeren, Hans
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorArtoni, Cesari
dc.contributor.authorCorallo, Giuseppina
dc.contributor.authorZambrano, Raffaele
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-16T07:15:04Z
dc.date.available2021-10-16T07:15:04Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11573
dc.source.beginpage640
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials
dc.source.conferencedate12/09/2005
dc.source.conferencelocationKobe Japan
dc.source.endpage641
dc.title

Effects of voltage cycling on polarization and reliability of 3D SBT ferroelectric capacitors integrated in 0.18um CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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