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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

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1942 since deposited on 2021-10-15
2last month
Acq. date: 2026-08-08

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1942 since deposited on 2021-10-15
2last month
Acq. date: 2026-08-08

Citations