Publication:

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

Date

2004-12

Proceedings Paper

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Author(s)

Germain, Marianne

;

;

Boeykens, Steven

;

Degroote, Stefan

;

;

Schreurs, Dominique

;

Ruythooren, Wouter

;

Choi, Kang-Hoon

;

;

Van Tendeloo, G.

;

Borghs, Gustaaf

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1940 since deposited on 2021-10-15

Acq. date: 2026-04-30