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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
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1940 since deposited on 2021-10-15
1last month
Acq. date: 2026-03-16
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Statistics
Views
1940 since deposited on 2021-10-15
1last month
Acq. date: 2026-03-16
Citations