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Low-frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Date

2012
Proceedings Paper
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dc.contributor.authorde Andrade, M.G.C.
dc.contributor.authorMartino, J.A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T10:28:20Z
dc.date.available2021-10-20T10:28:20Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20526
dc.source.beginpage97
dc.source.conference13th International Conference on ULtimate Integration on Silicon - ULIS
dc.source.conferencedate5/03/2012
dc.source.conferencelocationGrenoble France
dc.source.endpage100
dc.title

Low-frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

dc.typeProceedings paper
dspace.entity.typePublication
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