Publication:

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

Date

2022-05-02
Proceedings Paper
https://doi.org/10.1109/IRPS48227.2022.9764470
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dc.contributor.authorVandemaele, Michiel
dc.contributor.authorKaczer, Ben
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorBury, Erik
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMakarov, Alexander
dc.contributor.authorMertens, Hans
dc.contributor.authorHellings, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMakarov, Alexander
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.contributor.orcidimecMakarov, Alexander::0000-0002-9927-6511
dc.contributor.orcidimecMertens, Hans::0000-0002-3392-6892
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.date.accessioned2024-01-16T08:01:21Z
dc.date.available2023-02-27T03:28:17Z
dc.date.available2023-02-28T17:22:45Z
dc.date.available2023-04-19T08:33:20Z
dc.date.available2024-01-16T08:01:21Z
dc.date.embargo2022-12-31
dc.date.issued2022-05-02
dc.description.wosFundingTextMichiel Vandemaele is supported by a PhD Fellowship of the Research Foundation - Flanders (Belgium) (application number 11A3621N). Fruitful discussions with Romain Ritzenthaler (imec), Zlatan Stanojevi ' c (Global TCAD Solutions GmbH) and Pieter Weckx (imec) are gratefully acknowledged.
dc.identifier.doi10.1109/IRPS48227.2022.9764470
dc.identifier.eisbn978-1-6654-7950-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41171
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 27-31, 2022
dc.source.conferencelocationDallas
dc.source.journalna
dc.source.numberofpages9
dc.subject.disciplineElectrical & electronic engineering
dc.title

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

dc.typeProceedings paper
dspace.entity.typePublication
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