Publication:

Resolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defects

Date

2009
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorKaczer, Ben
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-18T03:39:47Z
dc.date.available2021-10-18T03:39:47Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16314
dc.source.beginpage749
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD US
dc.source.endpage752
dc.title

Resolving fast VtH transients after program/erase of flash memory stacks and their relation to electron and hole defects

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
19491.pdf
Size:
816.69 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions