Publication:

Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers

Date

2000
Presentation
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dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHeyns, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorNaili, Mohamed
dc.contributor.authorMertens, Paul
dc.contributor.authorStesmans, Andre
dc.contributor.authorJeon, J. S.
dc.contributor.authorHalliyal, A.
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-14T13:04:40Z
dc.date.available2021-10-14T13:04:40Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4434
dc.source.conferenceSemicon Europe
dc.source.conferencedate4/04/2000
dc.source.conferencelocationMünchen Germany
dc.title

Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers

dc.typeOral presentation
dspace.entity.typePublication
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