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Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV

Date

2018-12
Proceedings Paper
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dc.contributor.authorSaeidi, Ali
dc.contributor.authorVerhulst, Anne
dc.contributor.authorStolichnov, Igor
dc.contributor.authorAlian, AliReza
dc.contributor.authorIwai, Hiroshi
dc.contributor.authorCollaert, Nadine
dc.contributor.authorIonescu, Adrian
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-26T03:01:32Z
dc.date.available2021-10-26T03:01:32Z
dc.date.embargo9999-12-31
dc.date.issued2018-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31702
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614583
dc.source.beginpage304
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage307
dc.title

Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV

dc.typeProceedings paper
dspace.entity.typePublication
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