Publication:

First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

Date

2022
Proceedings Paper
https://doi.org/10.1109/IEDM45625.2022.10019360
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dc.contributor.authorCai, Kaiming
dc.contributor.authorTalmelli, Giacomo
dc.contributor.authorFan, Kaiquan
dc.contributor.authorVan Beek, Simon
dc.contributor.authorKateel, Vaishnavi
dc.contributor.authorGupta, Mohit
dc.contributor.authorGama Monteiro Junior, Maxwel
dc.contributor.authorBen Chroud, Mohamed
dc.contributor.authorJayakumar, Ganesh
dc.contributor.authorTrovato, Anna
dc.contributor.authorRao, Siddharth
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorCouet, Sebastien
dc.contributor.imecauthorCai, Kaiming
dc.contributor.imecauthorTalmelli, Giacomo
dc.contributor.imecauthorFan, Kaiquan
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorKateel, Vaishnavi
dc.contributor.imecauthorGupta, Mohit
dc.contributor.imecauthorGama Monteiro Junior, Maxwel
dc.contributor.imecauthorBen Chroud, Mohamed
dc.contributor.imecauthorJayakumar, Ganesh
dc.contributor.imecauthorTrovato, Anna
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.orcidimecCai, Kaiming::0000-0002-1160-864X
dc.contributor.orcidimecTalmelli, Giacomo::0000-0001-7763-7008
dc.contributor.orcidimecFan, Kaiquan::0000-0003-4875-7179
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecGupta, Mohit::0000-0002-1924-1264
dc.contributor.orcidimecGama Monteiro Junior, Maxwel::0000-0002-5515-458X
dc.contributor.orcidimecBen Chroud, Mohamed::0000-0003-3312-7342
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.date.accessioned2023-06-01T13:06:15Z
dc.date.available2023-05-25T20:20:24Z
dc.date.available2023-06-01T13:06:15Z
dc.date.embargo2023-07-23
dc.date.issued2022
dc.description.wosFundingTextThis work was supported by IMEC's industrial affiliation program on MRAM device. We also acknowledge the support from the ECSEL Joint Undertaking Program (grant No. 876925-project ANDANTE) and the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie (grant No. 955671).
dc.identifier.doi10.1109/IEDM45625.2022.10019360
dc.identifier.eisbn978-1-6654-8959-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41633
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

dc.typeProceedings paper
dspace.entity.typePublication
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