Publication:

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Date

2016

Journal article

Simple item page Full metadata Statistics

Files

33329.pdf 752.05 KB

Author(s)

Meneghini, Matteo

;

Rossetto, Isabella

;

;

Ruzzarin, Maria

;

Van Hove, Marleen

;

Stoffels, Steve

;

;

;

Decoutere, Stefaan

;

Meneghesso, Gaudio

;

Journal

IEEE Electron Device Letters

Metrics

1959 since deposited on 2021-10-23

Acq. date: 2025-12-13