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Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Date

2013
Journal article
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dc.contributor.authorRampelberg, Geert
dc.contributor.authorDevloo-Casier, Kilian
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBlasco, Nicolas
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-21T11:17:55Z
dc.date.available2021-10-21T11:17:55Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22982
dc.source.beginpage111910
dc.source.issue11
dc.source.journalApplied Physics Letters
dc.source.volume102
dc.title

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

dc.typeJournal article
dspace.entity.typePublication
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