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Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties

Date

2014
Journal article
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dc.contributor.authorTseng, Peter
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorLieten, Ruben
dc.contributor.authorVereecken, Philippe
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorVereecken, Philippe
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecVereecken, Philippe::0000-0003-4115-0075
dc.date.accessioned2021-10-22T06:42:22Z
dc.date.available2021-10-22T06:42:22Z
dc.date.issued2014
dc.identifier.issn1932-7447
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24632
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/jp508314q
dc.source.beginpage29492
dc.source.endpage29498
dc.source.issue51
dc.source.journalJournal of Physical Chemistry C
dc.source.volume118
dc.title

Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties

dc.typeJournal article
dspace.entity.typePublication
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