Publication:

Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness

Date

2009
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorThijs, Steven
dc.contributor.authorRuss, Christian
dc.contributor.authorTremouilles, David
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-17T22:34:37Z
dc.date.available2021-10-17T22:34:37Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15400
dc.source.conferenceRCJ Symposium
dc.source.conferencedate22/10/2009
dc.source.conferencelocationTokyo Japan
dc.title

Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions