Publication:

On the apparent non-Arrhenius temperature dependence of charge-trapping in IIIV/high-k MOS stack

Date

2018
Journal article
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dc.contributor.authorPutcha, Vamsi
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-26T01:39:21Z
dc.date.available2021-10-26T01:39:21Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31572
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8412232
dc.source.beginpage3689
dc.source.endpage3696
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

On the apparent non-Arrhenius temperature dependence of charge-trapping in IIIV/high-k MOS stack

dc.typeJournal article
dspace.entity.typePublication
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