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Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks
Publication:
Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks
Date
1998
Proceedings Paper
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2529.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lee, Hean-Cheal
;
Creusen, Martin
;
Groeseneken, Guido
;
Vanhaelemeersch, Serge
Journal
Abstract
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1921
since deposited on 2021-09-30
430
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Acq. date: 2025-10-25
Citations
Metrics
Views
1921
since deposited on 2021-09-30
430
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations