Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate

dc.contributor.author	Liang, Hu
dc.contributor.author	Saripalli, Yoga
dc.contributor.author	Kandaswamy, Prem Kumar
dc.contributor.author	Carlson, Eric Porter
dc.contributor.author	Favia, Paola
dc.contributor.author	Richard, Olivier
dc.contributor.author	Bender, Hugo
dc.contributor.author	Zhao, Ming
dc.contributor.author	Thapa, Sarad Bahadur
dc.contributor.author	Vancoille, Eric
dc.contributor.imecauthor	Liang, Hu
dc.contributor.imecauthor	Favia, Paola
dc.contributor.imecauthor	Richard, Olivier
dc.contributor.imecauthor	Bender, Hugo
dc.contributor.imecauthor	Zhao, Ming
dc.contributor.imecauthor	Thapa, Sarad Bahadur
dc.contributor.imecauthor	Vancoille, Eric
dc.contributor.orcidimec	Favia, Paola::0000-0002-1019-3497
dc.contributor.orcidimec	Richard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimec	Zhao, Ming::0000-0002-0856-851X
dc.date.accessioned	2021-10-22T03:04:26Z
dc.date.available	2021-10-22T03:04:26Z
dc.date.issued	2014
dc.identifier.issn	1610-1634
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24138
dc.identifier.url	http://onlinelibrary.wiley.com/doi/10.1002/pssc.201300555/abstract
dc.source.beginpage	533
dc.source.endpage	536
dc.source.issue	3_4
dc.source.journal	Physica Status Solidi C
dc.source.volume	11
dc.title	Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
dc.type	Journal article
dspace.entity.type	Publication
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