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Integration of III/V hetero-structures by selective area growth on Si for nano- and optoelectronics

Date

2016
Meeting abstract
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dc.contributor.authorKunert, Bernardette
dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorLanger, Robert
dc.contributor.authorBarla, Kathy
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorBarla, Kathy
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-23T11:57:51Z
dc.date.available2021-10-23T11:57:51Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26861
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2016-02/30/2034.abstract
dc.source.beginpage2034
dc.source.conferencePRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI USA
dc.title

Integration of III/V hetero-structures by selective area growth on Si for nano- and optoelectronics

dc.typeMeeting abstract
dspace.entity.typePublication
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