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Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies

 
dc.contributor.authorLoo, Roger
dc.contributor.authorPorret, Clément
dc.contributor.authorHan, Han
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVecchio, Emma
dc.contributor.authorDepauw, Valerie
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorDepauw, Valerie
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecDepauw, Valerie::0000-0003-2045-9698
dc.date.accessioned2022-03-02T09:11:00Z
dc.date.available2022-03-02T09:11:00Z
dc.date.issued2021
dc.identifier.doi10.1149/2162-8777/ac1a0b
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39207
dc.publisherELECTROCHEMICAL SOC INC
dc.source.beginpage084003
dc.source.issue8
dc.source.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
dc.source.numberofpages7
dc.source.volume10
dc.subject.keywordsGERMANIUM
dc.subject.keywordsCOALESCENCE
dc.subject.keywordsLAYERS
dc.title

Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies

dc.typeJournal article
dspace.entity.typePublication
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