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In-line characterisation of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution X-ray diffraction

Date

2008
Proceedings Paper
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorRyan, P.
dc.contributor.authorWormington, M.
dc.contributor.authorHopkins, J.
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T07:41:39Z
dc.date.available2021-10-17T07:41:39Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13879
dc.source.beginpage137
dc.source.conference4th International SiGe Technology and Device meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage138
dc.title

In-line characterisation of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution X-ray diffraction

dc.typeProceedings paper
dspace.entity.typePublication
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