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Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-delta-doped InSb layers grown on GaAs

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dc.contributor.authorBogaerts, R.
dc.contributor.authorDe Keyser, A.
dc.contributor.authorVan Bockstal, L.
dc.contributor.authorHerlach, F.
dc.contributor.authorKaravolas, V. C.
dc.contributor.authorPeeters, F. M.
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T13:04:19Z
dc.date.available2021-09-29T13:04:19Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/532
dc.source.beginpage596
dc.source.conference11th International Conference , High Magnetic Fields in the Physics of Semiconductors; 8-12 August 1994; Cambridge, MA, USA.
dc.source.conferencelocation
dc.source.endpage9
dc.title

Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-delta-doped InSb layers grown on GaAs

dc.typeProceedings paper
dspace.entity.typePublication
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