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Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics

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dc.contributor.authorClima, Sergiu
dc.contributor.authorChen, Yangyin
dc.contributor.authorFantini, Andrea
dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorPourtois, Geoffrey
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-22T18:43:08Z
dc.date.available2021-10-22T18:43:08Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25088
dc.source.conferenceMRS Spring Meeting Symposium AA: Materials for Beyond the Roadmap Devices in Logic, Power and Memory
dc.source.conferencedate6/04/2015
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics

dc.typeMeeting abstract
dspace.entity.typePublication
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