Publication:

Effect of test structure on electromigration characteristics in 3D-TSV stacked devices

Date

2015
Journal article
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dc.contributor.authorOba, Yoshiyuki
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorTyrovouzi, Anna-Maria
dc.contributor.authorMiyamori, Yuichi
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorWang, Teng
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorCroes, Kristof
dc.contributor.imecauthorDe Messemaeker, Joke
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorCroes, Kristof
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.date.accessioned2021-10-22T21:25:38Z
dc.date.available2021-10-22T21:25:38Z
dc.date.issued2015
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25698
dc.identifier.urlhttp://m.iopscience.iop.org/1347-4065/54/5S/05EE01/pdf/1347-4065_54_5S_05EE01.pdf
dc.source.beginpage05EE01
dc.source.issue5S
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume54
dc.title

Effect of test structure on electromigration characteristics in 3D-TSV stacked devices

dc.typeJournal article
dspace.entity.typePublication
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