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Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

Date

2011
Journal article
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dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T16:44:34Z
dc.date.available2021-10-19T16:44:34Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19488
dc.source.beginpage46
dc.source.endpage52
dc.source.issue1
dc.source.journalSolid-State Electronics
dc.source.volume60
dc.title

Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

dc.typeJournal article
dspace.entity.typePublication
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