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Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers

Date

2003
Meeting abstract
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dc.contributor.authorJiménez, A.
dc.contributor.authorTirado, J.M.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorBraña de Cal, Alejandro F.
dc.contributor.authorGrajal, J.
dc.contributor.authorCubilla, P.
dc.contributor.authorMuñoz, E.
dc.contributor.authorCalleja, E.
dc.contributor.authorVerdu, M.
dc.contributor.authorMontojo, M.T.
dc.contributor.authorMoerman, Ingrid
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-15T05:02:12Z
dc.date.available2021-10-15T05:02:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7694
dc.source.conferenceAbstracts Book WOCSDICE - 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
dc.source.conferencedate26/05/2003
dc.source.conferencelocationFürigen Switzerland
dc.title

Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers

dc.typeMeeting abstract
dspace.entity.typePublication
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