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Photoanodic pyramid texturization of n-Ge (100) in HCl solution: unexpected anisotropy in the surface chemistry of etching

Date

2019
Journal article
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dc.contributor.authorAbrenica, Graniel
dc.contributor.authorLebedev, Mikhail
dc.contributor.authorLe, Hy
dc.contributor.authorHajduk, Andreas
dc.contributor.authorFingerle, Mathias
dc.contributor.authorMayer, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorvan Dorp, Dennis
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorLe, Hy
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.date.accessioned2021-10-27T07:25:02Z
dc.date.available2021-10-27T07:25:02Z
dc.date.issued2019
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32401
dc.identifier.urlhttps://pubs.rsc.org/en/content/articlelanding/2019/tc/c8tc06091f#!divAbstract
dc.source.beginpage4846
dc.source.endpage4854
dc.source.issue16
dc.source.journalJournal of Materials Chemistry C
dc.source.volume7
dc.title

Photoanodic pyramid texturization of n-Ge (100) in HCl solution: unexpected anisotropy in the surface chemistry of etching

dc.typeJournal article
dspace.entity.typePublication
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