Publication:
Selective growth of strained GE channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and Fin pFET
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1753 since deposited on 2021-10-20
Acq. date: 2025-12-15
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Views
1753 since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations