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On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments

Date

1996
Proceedings Paper
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorSenkader, S.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, Patrick
dc.contributor.imecauthorKenis, Karine
dc.date.accessioned2021-09-29T15:45:38Z
dc.date.available2021-09-29T15:45:38Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1615
dc.source.beginpage226
dc.source.conferenceProceedings of the 4th International Symposium on High Purity Silicon
dc.source.conferencedate6/10/1996
dc.source.conferencelocationSan Antonio, TX USA
dc.source.endpage237
dc.title

On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments

dc.typeProceedings paper
dspace.entity.typePublication
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