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Post-etch cleaning after dry etching the emitter windows to improve the bipolar characteristics in a 0.5 µm BiCMOS technology

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dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorDeferm, Ludo
dc.contributor.authorVleugels, Frank
dc.contributor.authorVancuyck, Geert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorVancuyck, Geert
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.accessioned2021-09-29T12:40:49Z
dc.date.available2021-09-29T12:40:49Z
dc.date.embargo9999-12-31
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/129
dc.source.beginpage137
dc.source.conference24th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/1994
dc.source.conferencelocationEdinburgh UK
dc.source.endpage140
dc.title

Post-etch cleaning after dry etching the emitter windows to improve the bipolar characteristics in a 0.5 µm BiCMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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