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Fundamental relation between local and effective transverse-field-dependent mobility for electrons in inversion channels

Date

1996
Proceedings Paper
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dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-29T14:17:17Z
dc.date.available2021-09-29T14:17:17Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1090
dc.source.beginpage103
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate2/09/1996
dc.source.conferencelocationTokyo Japan
dc.source.endpage104
dc.title

Fundamental relation between local and effective transverse-field-dependent mobility for electrons in inversion channels

dc.typeProceedings paper
dspace.entity.typePublication
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