Publication:

Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry

Date

2018
Proceedings Paper
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorConard, Thierry
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorKelly, John
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-26T06:46:59Z
dc.date.available2021-10-26T06:46:59Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32045
dc.identifier.urlhttps://www.scientific.net/SSP.282.48
dc.source.beginpage48
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.source.endpage51
dc.title

Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry

dc.typeProceedings paper
dspace.entity.typePublication
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