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Comparison between short channel bulk (silicon) and body-tied partially depleted SOI nMOS for high frequency low voltage analog circuit design

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dc.contributor.authorBabcock, J. A.
dc.contributor.authorFrancis, P.
dc.contributor.authorØlgaard, C.
dc.contributor.authorHaggag, H.
dc.contributor.authorDarmawan, J. A.
dc.contributor.authorArcher, D. M.
dc.contributor.authorJansen, Philippe
dc.contributor.authorLeeman, Marc
dc.contributor.authorSchroder, D. K.
dc.date.accessioned2021-10-06T10:41:11Z
dc.date.available2021-10-06T10:41:11Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3196
dc.source.beginpage208
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
dc.source.endpage211
dc.title

Comparison between short channel bulk (silicon) and body-tied partially depleted SOI nMOS for high frequency low voltage analog circuit design

dc.typeProceedings paper
dspace.entity.typePublication
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