Publication:

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current

Date

2019
Proceedings Paper
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dc.contributor.authorSmets, Quentin
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorJussot, Julien
dc.contributor.authorVerreck, Devin
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorGaur, Abhinav
dc.contributor.authorLin, Dennis
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorGroven, Benjamin
dc.contributor.authorCaymax, Matty
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorJussot, Julien
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecJussot, Julien::0000-0002-2484-3462
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.date.accessioned2021-10-27T18:39:48Z
dc.date.available2021-10-27T18:39:48Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34035
dc.source.beginpage550
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage553
dc.title

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current

dc.typeProceedings paper
dspace.entity.typePublication
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